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- 2025
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Mark
Multi-level vertical III-V nanowire gate-all-around ferroelectric FETs for in-memory computing
(2025)
- Contribution to conference › Abstract
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Mark
Impact of Layout on the RF Performance of Vertical In–Ga–As Nanowire MOSFETs
- Contribution to journal › Article
-
Mark
Real-Time Near-Field mmWave Measurements Using Screen-Printed Metasurfaces and IR Camera
- Contribution to journal › Article
-
Mark
Scalable Vertical In-Ga-As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width
- Contribution to journal › Article
-
Mark
Simulating Scaling Effects in Fully Vertical GaN FinFETs
- Contribution to journal › Article
-
Mark
Cryogenic ferroelectricity of HZO with an aluminum oxide interlayer
(2025) In IEEE Transactions on Electron Devices
- Contribution to journal › Article
-
Mark
Overview and current status of the IFMIF-DONES accelerator systems
- Contribution to journal › Article
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Mark
Shadow Area and Degrees of Freedom for Free-Space Communication
- Contribution to journal › Article
-
Mark
Fundamental Limits of Characteristic Mode Slopes
(2025) In IEEE Transactions on Antennas and Propagation
- Contribution to journal › Article
-
Mark
Designing objects that are invisible to electromagnetic waves
- Contribution to journal › Article
