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- 2025
-
Mark
Flexible fabrication of aligned multi-nanowire circuits for on-chip prototyping
- Contribution to journal › Article
- 2019
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
(2019) In Microelectronic Engineering
- Contribution to journal › Article
- 2018
-
Mark
Nanoimprint stamps with ultra-high resolution : Optimal fabrication techniques
- Contribution to journal › Article
-
Mark
Towards sub-micrometer high aspect ratio X-ray gratings by atomic layer deposition of iridium
- Contribution to journal › Article
- 2017
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55
- Contribution to journal › Article
-
Mark
High aspect ratio metal microcasting by hot embossing for X-ray optics fabrication
- Contribution to journal › Article
- 2011
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
(2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2009
-
Mark
Negative UV–NIL (NUV–NIL) – A mix-and-match NIL and UV strategy for realisation of nano- and micrometre structures
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
