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- 2020
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
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Mark
High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction
(
- Contribution to journal › Article
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Mark
Electrical Characterisation of III-V Nanowire MOSFETs
2020) In Series of Licentiate and Doctoral Theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
-
Mark
Direct Three-Dimensional Imaging of an X-ray Nanofocus Using a Single 60 nm Diameter Nanowire Device
(
- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
- 2019
-
Mark
Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale
(
- Contribution to journal › Article
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Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
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Mark
Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires
2019)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article