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2013
Mark A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
Johansson, Sofia ^LU ; Berg, Martin ^LU ; Persson, Karl-Magnus ^LU and Lind, Erik ^LU (2013) In IEEE Transactions on Electron Devices 60(2). p.776-781
- Contribution to journal › Article
Mark Novel Processing and Electrical Characterization of Nanowires
Storm, Kristian ^LU (2013)
- Thesis › Doctoral thesis (compilation)
Mark Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
Dey, Anil ^LU ; Svensson, Johannes ^LU ; Ek, Martin ^LU ; Lind, Erik ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2013) In Nano Letters 13(12). p.5919-5924
- Contribution to journal › Article
Mark Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
Persson, Karl-Magnus ^LU ; Malm, B. G. and Wernersson, Lars-Erik ^LU (2013) In Applied Physics Letters 103(3).
- Contribution to journal › Article
2012
Mark Highly controlled InAs nanowires on Si(111) wafers by MOVPE
Gorji, Sepideh ^LU ; Johansson, Sofia ^LU ; Borg, Mattias ^LU ; Dick Thelander, Kimberly ^LU and Wernersson, Lars-Erik ^LU (2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Drastically increased absorption in vertical semiconductor nanowire arrays: A non-absorbing dielectric shell makes the difference
Anttu, Nicklas ^LU ; Namazi, Kousar ; Wu, Phillip ^LU ; Yang, Pengfei ; Xu, Hongxing ^LU ; Xu, Hongqi ^LU and Håkanson, Ulf ^LU (2012) In Nano Reseach 5(12). p.863-874
- Contribution to journal › Article
Mark Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Wu, Jun ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
- Contribution to journal › Published meeting abstract
Mark Performance Evaluation of III–V Nanowire Transistors
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Transactions on Electron Devices 59(9). p.2375-2382
- Contribution to journal › Article
Mark High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Dey, Anil ^LU ; Borg, Mattias ^LU ; Ganjipour, Bahram ^LU ; Ek, Martin ^LU ; Dick Thelander, Kimberly ^LU ; Lind, Erik ^LU ; Nilsson, Peter ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2012) 70th Annual Device Research Conference (DRC) p.205-206
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Nilsson, Peter ^LU and Wernersson, Lars-Erik ^LU (2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding

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