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2012
Mark High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Nilsson, Peter ^LU and Wernersson, Lars-Erik ^LU (2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding
Mark High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
Johansson, Sofia ^LU ; Gorji, Sepideh ^LU ; Egard, Mikael ^LU ; Borg, Mattias ^LU ; Berg, Martin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353
- Contribution to journal › Article
2011
Mark RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Johansson, Sofia ^LU ; Egard, Mikael ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Berg, Martin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) In IEEE Transactions on Microwave Theory and Techniques 59(10). p.2733-2738
- Contribution to journal › Article
Mark Design of RF Properties for Vertical Nanowire MOSFETs
Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) In IEEE Transactions on Nanotechnology 10(4). p.668-673
- Contribution to journal › Article
Mark Temperature and annealing effects on InAs nanowire MOSFETs
Johansson, Sofia ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) 17th International Conference on Insultating Films on Semiconductors 88(7). p.1105-1108
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU ; Caroff, Philippe ^LU ; Borgström, Magnus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2010
Mark Surface structure and morphology of InAs(111)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux
Hilner, Emelie ^LU ; Lundgren, Edvin ^LU and Mikkelsen, Anders ^LU (2010) In Surface Science 604(3-4). p.354-360
- Contribution to journal › Article
Mark Low-frequency noise in vertical InAs nanowire FETs
Persson, Karl-Magnus ^LU ; Lind, Erik ^LU ; Dey, Anil ^LU ; Thelander, Claes ^LU ; Sjöland, Henrik ^LU and Wernersson, Lars-Erik ^LU (2010) In IEEE Electron Device Letters 31(5). p.428-430
- Contribution to journal › Article
Mark Modelling and optimization of III/V transistors with matrices of nanowires
Larsen, Christian ; Ärlelid, Mats ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2010) In Solid-State Electronics 54(12). p.1505-1510
- Contribution to journal › Article
Mark Electrical Characterization of Integrated InAs Nano-Structures
Astromskas, Gvidas ^LU (2010)
- Thesis › Doctoral thesis (compilation)

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