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- 2019
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Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
(
- Contribution to journal › Article
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Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
(
- Contribution to journal › Article
- 2017
-
Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
(
- Contribution to journal › Article
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Mark
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
(
- Contribution to journal › Article
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Mark
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
(
- Contribution to journal › Article
- 2016
-
Mark
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
(
- Contribution to journal › Article
-
Mark
III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
2016) 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
(
- Contribution to journal › Article
-
Mark
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding