Johannes Svensson

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2019
Mark Integration of InSb on Si by Rapid Melt Growth
Menon, Heera ^LU ; Svensson, Johannes ^LU ; Wernersson, Lars-Erik ^LU ; Borg, Mattias ^LU ; Steer, Matthew and Thayne, Iain (2019) 21th International Vacuum Congress
- Contribution to conference › Abstract
Mark Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2019) In Applied Physics Letters 115(14).
- Contribution to journal › Article
Mark Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2019) 21th International Vacuum Congress
- Contribution to conference › Abstract
2018
Mark Fabrication of Tunnel Field-Effect Transistors
Krishnaraja, Abinaya ^LU ; Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) 76th Device Research Conference p.137-138
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
Jonsson, Adam ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.935-938
- Contribution to journal › Article
Mark RF Characterisation of Vertical III-V Nanowire Tunnel FETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
Mark Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.943-946
- Contribution to journal › Letter
Mark Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2018) 63rd IEEE International Electron Devices Meeting, IEDM 2017 Part F134366. p.1-17
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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