Vanya Darakchieva

11 – 20 of 72

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/person/6b5e1d8c-d145-4282-8da6-5e7f47f6611c?embed=1&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

« previous
1
2
3
4
5
…
8
next »

2025
Mark Simulating Scaling Effects in Fully Vertical GaN FinFETs
Simko, Alexander ; Garigapati, Navya Sri ^LU ; Logotheti, Adamantia ^LU ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2025) In Physica Status Solidi (A) Applications and Materials Science 222(23).
- Contribution to journal › Article
2024
Mark Characterization of semiconductors by spectroscopic ellipsometry
Schubert, Mathias ^LU ; Mock, Alyssa ; Stokey, Megan ; Rindert, Viktor ^LU ; Armakavicius, Nerijus and Darakchieva, Vanya ^LU (2024) 2. p.2-539
- Chapter in Book/Report/Conference proceeding › Book chapter
Mark COMPREHENSIVE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, SECOND EDITION : Volumes 1-3
Fornari, Roberto ; Grundmann, Marius ; Darakchieva, Vanya ^LU and Fay, Patrick (2024) 1-3.
- Book/Report › Book
Mark PREFACE TO VOLUME 2
Darakchieva, Vanya ^LU (2024) 2. p.2-2
- Chapter in Book/Report/Conference proceeding › Foreword/Postscript
Mark Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Vidarsson, A. M. ; Persson, A. R. ; Chen, J. T. ^LU ; Haasmann, D. ; Hassan, J. ; Dimitrijev, S. ; Rorsman, N. ; Darakchieva, V. ^LU and Sveinbjörnsson, E. (2024) 358. p.59-64
- Chapter in Book/Report/Conference proceeding › Book chapter
Mark Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Papamichail, A. ; Persson, A. R. ; Richter, S. ^LU ; Stanishev, V. ^LU ; Armakavicius, N. ; Kühne, P. ; Guo, S. ; Persson, P. O.I. ; Paskov, P. P. and Rorsman, N. , et al. (2024) In Applied Physics Letters 125(12).
- Contribution to journal › Article
Mark Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
Hult, Björn ; Bergsten, Johan ; Ferrand-Drake Del Castillo, Ragnar ; Darakchieva, Vanya ^LU ; Malmros, Anna ; Hjelmgren, Hans ; Thorsell, Mattias and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(12). p.7383-7389
- Contribution to journal › Article
Mark Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
Armakavicius, Nerijus ; Kühne, Philipp ; Papamichail, Alexis ; Zhang, Hengfang ; Knight, Sean ^LU ; Persson, Axel ; Stanishev, Vallery ; Chen, Jr Tai ; Paskov, Plamen and Schubert, Mathias ^LU , et al. (2024) In Materials 17(13).
- Contribution to journal › Article
Mark Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
Mock, Alyssa ; Richter, Steffen ^LU ; Papamichail, Alexis ; Stanishev, Vallery ; Ghezellou, Misagh ; Ul-Hassan, Jawad ; Popp, Andreas ; Bin Anooz, Saud ; Gogova, Daniela and Ranga, Praneeth , et al. (2024) In Physical Review Applied 22(4).
- Contribution to journal › Article
Mark Determination of the conduction and valence band offsets at the Co₃O₄/3C-SiC p-n heterojunction
Zeng, Hui ; Wang, Weimin ^LU ; Ivanov, Ivan G. ; Darakchieva, Vanya ^LU and Sun, Jianwu (2024) In Applied Physics Letters 125(16).
- Contribution to journal › Article

« previous
1
2
3
4
5
…
8
next »