Vanya Darakchieva
11 – 20 of 72
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2025
-
Mark
Simulating Scaling Effects in Fully Vertical GaN FinFETs
- Contribution to journal › Article
- 2024
-
Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
- Contribution to journal › Article
-
Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
- Contribution to journal › Article
-
Mark
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
- Contribution to journal › Article
-
Mark
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
- Contribution to journal › Article
-
Mark
Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
- Contribution to journal › Article
-
Mark
Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
- Contribution to journal › Article
-
Mark
PREFACE TO VOLUME 2
- Chapter in Book/Report/Conference proceeding › Foreword/Postscript
-
Mark
Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
- Contribution to journal › Article
-
Mark
Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
- Contribution to journal › Article
