Vanya Darakchieva

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2024
Mark The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III–V Superlattices
Matson, Joseph R. ; Alam, Md Nazmul ; Varnavides, Georgios ; Sohr, Patrick ; Knight, Sean ^LU ; Darakchieva, Vanya ^LU ; Stokey, Megan ; Schubert, Mathias ^LU ; Said, Ayman and Beechem, Thomas , et al. (2024) In Advanced Materials 36(3).
- Contribution to journal › Article
Mark Bloch equations in terahertz magnetic-resonance ellipsometry
Rindert, Viktor ^LU ; Richter, Steffen ^LU ; Kühne, Philipp ; Ruder, Alexander ; Darakchieva, Vanya ^LU and Schubert, Mathias ^LU (2024) In Physical Review B 110(5).
- Contribution to journal › Article
Mark Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
Kuang, Chaoyang ; Chen, Shangzhi ; Luo, Min ; Zhang, Qilun ; Sun, Xiao ; Han, Shaobo ; Wang, Qingqing ; Stanishev, Vallery ; Darakchieva, Vanya ^LU and Crispin, Reverant , et al. (2024) In Advanced Science 11(3).
- Contribution to journal › Article
Mark Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
Castillo, Ragnar Ferrand Drake Del ; Chen, Ding Yuan ; Chen, Jr Tai ; Thorsell, Mattias ; Darakchieva, Vanya ^LU and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(6). p.3596-3602
- Contribution to journal › Article
Mark Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
Armakavicius, Nerijus ; Kühne, Philipp ; Papamichail, Alexis ; Zhang, Hengfang ; Knight, Sean ^LU ; Persson, Axel ; Stanishev, Vallery ; Chen, Jr Tai ; Paskov, Plamen and Schubert, Mathias ^LU , et al. (2024) In Materials 17(13).
- Contribution to journal › Article
Mark Determination of the conduction and valence band offsets at the Co₃O₄/3C-SiC p-n heterojunction
Zeng, Hui ; Wang, Weimin ^LU ; Ivanov, Ivan G. ; Darakchieva, Vanya ^LU and Sun, Jianwu (2024) In Applied Physics Letters 125(16).
- Contribution to journal › Article
Mark Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Logotheti, Adamantia ^LU ; Garigapati, Navya Sri ^LU ; So, Byeongchan ^LU ; Colvin, Jovana ^LU ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2024) In Physica Status Solidi. A: Applications and Materials Science
- Contribution to journal › Article
Mark Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Papamichail, A. ; Persson, A. R. ; Richter, S. ^LU ; Stanishev, V. ^LU ; Armakavicius, N. ; Kühne, P. ; Guo, S. ; Persson, P. O.I. ; Paskov, P. P. and Rorsman, N. , et al. (2024) In Applied Physics Letters 125(12).
- Contribution to journal › Article
Mark Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces
Vidarsson, A. M. ; Persson, A. R. ; Chen, J. T. ^LU ; Haasmann, D. ; Hassan, J. ; Dimitrijev, S. ; Rorsman, N. ; Darakchieva, V. ^LU and Sveinbjörnsson, E. (2024) 358. p.59-64
- Chapter in Book/Report/Conference proceeding › Book chapter
Mark Characterization of semiconductors by spectroscopic ellipsometry
Schubert, Mathias ^LU ; Mock, Alyssa ; Stokey, Megan ; Rindert, Viktor ^LU ; Armakavicius, Nerijus and Darakchieva, Vanya ^LU (2024) 2. p.2-539
- Chapter in Book/Report/Conference proceeding › Book chapter