Vanya Darakchieva

31 – 40 of 75

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/person/6b5e1d8c-d145-4282-8da6-5e7f47f6611c?embed=1&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

« previous
1
…
3
4
5
6
…
8
next »

2024
Mark Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Papamichail, A. ; Persson, A. R. ; Richter, S. ^LU ; Stanishev, V. ^LU ; Armakavicius, N. ; Kühne, P. ; Guo, S. ; Persson, P. O.I. ; Paskov, P. P. and Rorsman, N. , et al. (2024) In Applied Physics Letters 125(12).
- Contribution to journal › Article
Mark Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
Hult, Björn ; Bergsten, Johan ; Ferrand-Drake Del Castillo, Ragnar ; Darakchieva, Vanya ^LU ; Malmros, Anna ; Hjelmgren, Hans ; Thorsell, Mattias and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(12). p.7383-7389
- Contribution to journal › Article
Mark Bloch equations in terahertz magnetic-resonance ellipsometry
Rindert, Viktor ^LU ; Richter, Steffen ^LU ; Kühne, Philipp ; Ruder, Alexander ; Darakchieva, Vanya ^LU and Schubert, Mathias ^LU (2024) In Physical Review B 110(5).
- Contribution to journal › Article
Mark Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
Armakavicius, Nerijus ; Knight, Sean ; Kühne, Philipp ; Stanishev, Vallery ; Tran, Dat Q. ; Richter, Steffen ^LU ; Papamichail, Alexis ; Stokey, Megan ; Sorensen, Preston and Kilic, Ufuk , et al. (2024) In APL Materials 12(2).
- Contribution to journal › Article
2023
Mark Thermal conductivity of Sc_xAl_1−xN and Y_xAl_1−xN alloys
Tran, Dat Q. ; Tasnádi, Ferenc ; Žukauskaitė, Agnė ; Birch, Jens ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In Applied Physics Letters 122(18).
- Contribution to journal › Article
Mark Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, Axel R. ; Gustafsson, Anders ^LU ; Bi, Zhaoxia ^LU ; Samuelson, Lars ^LU ; Darakchieva, Vanya ^LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
- Contribution to journal › Article
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
Mark Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
- Contribution to journal › Article
Mark Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(5). p.2408-2414
- Contribution to journal › Article
Mark Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
Papamichail, A. ; Persson, A. R. ; Richter, S. ^LU ; Kühne, P. ; Stanishev, V. ; Persson, P. O.Å. ; Ferrand-Drake Del Castillo, R. ; Thorsell, M. ; Hjelmgren, H. and Paskov, P. P. , et al. (2023) In Applied Physics Letters 122(15).
- Contribution to journal › Article

« previous
1
…
3
4
5
6
…
8
next »