Vanya Darakchieva

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2023
Mark Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al_xGa_1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ^LU and Persson, Per O.Å. , et al. (2023) In Journal of Applied Physics 134(18).
- Contribution to journal › Article
Mark THz Spectroscopic Electron Paramagnetic Resonance of the Fe³⁺Defect in GaN
Rindert, Viktor ^LU ; Richter, Steffen ^LU ; Knight, Sean ^LU ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
Chen, Ding Yuan ; Persson, Axel R. ; Darakchieva, Vanya ^LU ; Persson, Per O.Å. ; Chen, Jr Tai and Rorsman, Niklas (2023) In Semiconductor Science and Technology 38(10).
- Contribution to journal › Article
Mark On the thermal conductivity anisotropy in wurtzite GaN
Tran, Dat Q. ; Paskova, Tania ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In AIP Advances 13(9).
- Contribution to journal › Article
Mark High-quality N-polar GaN optimization by multi-step temperature growth process
Zhang, Hengfang ; Chen Jr., Tai ; Papamichail, Alexis ; Persson, Ingemar ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Journal of Crystal Growth 603.
- Contribution to journal › Article
Mark Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Zhang, Hengfang ; Persson, Ingemar ; Chen Jr., Tai ; Papamichail, Alexis ; Tran, Dat Q. ; Persson, Per O. Å. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Crystal Growth and Design 23(2). p.1049-1056
- Contribution to journal › Article
Mark Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
- Contribution to journal › Article
2022
Mark Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
Gogova, Daniela ; Ghezellou, Misagh ; Tran, Dat Q. ; Richter, Steffen ^LU ; Papamichail, Alexis ; Hassan, Jawad Ul ; Persson, Axel R. ^LU ; Persson, Per O. Å. ; Kordina, Olof and Monemar, Bo ^LU , et al. (2022) In AIP Advances 12(5).
- Contribution to journal › Article
Mark On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC
Zhang, Hengfang ; Persson, Ingemar ; Papamichail, Alexis ; Chen, Tai ; Persson, P. O.A. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2022) In Journal of Applied Physics 131(5).
- Contribution to journal › Article
Mark Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
Papamichail, Alexis ; Persson, Axel R. ; Ricther, Steffen ; Kuhne, Philipp ; Persson, Per O.A. ; Thorsell, Mattias ; Hjelmgren, Hans ; Rorsman, Niklas and Darakchieva, Vanya ^LU (2022) 2022 Compound Semiconductor Week, CSW 2022
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding