Vanya Darakchieva

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2023
Mark Thermal conductivity of Sc_xAl_1−xN and Y_xAl_1−xN alloys
Tran, Dat Q. ; Tasnádi, Ferenc ; Žukauskaitė, Agnė ; Birch, Jens ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In Applied Physics Letters 122(18).
- Contribution to journal › Article
Mark Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, Axel R. ; Gustafsson, Anders ^LU ; Bi, Zhaoxia ^LU ; Samuelson, Lars ^LU ; Darakchieva, Vanya ^LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
- Contribution to journal › Article
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
Mark Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya ^LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
- Contribution to journal › Article
Mark Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al_xGa_1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ^LU and Persson, Per O.Å. , et al. (2023) In Journal of Applied Physics 134(18).
- Contribution to journal › Article
Mark THz Spectroscopic Electron Paramagnetic Resonance of the Fe³⁺Defect in GaN
Rindert, Viktor ^LU ; Richter, Steffen ^LU ; Knight, Sean ^LU ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
Chen, Ding Yuan ; Persson, Axel R. ; Darakchieva, Vanya ^LU ; Persson, Per O.Å. ; Chen, Jr Tai and Rorsman, Niklas (2023) In Semiconductor Science and Technology 38(10).
- Contribution to journal › Article
Mark On the thermal conductivity anisotropy in wurtzite GaN
Tran, Dat Q. ; Paskova, Tania ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In AIP Advances 13(9).
- Contribution to journal › Article
Mark Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
- Contribution to journal › Article
2022
Mark Infrared-active phonon modes and static dielectric constants in -(Al_xGa _1-x)₂O₃(0.18 ≤ x ≤ 0.54) alloys
Stokey, Megan ; Gramer, Teresa ; Korlacki, Rafał ; Knight, Sean ; Richter, Steffen ^LU ; Jinno, Riena ; Cho, Yongjin ; Xing, Huili Grace ; Jena, Debdeep and Hilfiker, Matthew , et al. (2022) In Applied Physics Letters 120(11).
- Contribution to journal › Article