Lars-Erik Wernersson

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2012
Mark Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Wu, Jun ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
- Contribution to journal › Published meeting abstract
Mark Performance Evaluation of III–V Nanowire Transistors
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Transactions on Electron Devices 59(9). p.2375-2382
- Contribution to journal › Article
Mark In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
Egard, Mikael ^LU ; Ärlelid, Mats ^LU ; Ohlsson, Lars ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(7). p.970-972
- Contribution to journal › Article
Mark High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Ärlelid, Mats ^LU ; Persson, Karl-Magnus ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(3). p.369-371
- Contribution to journal › Article
Mark High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Dey, Anil ^LU ; Borg, Mattias ^LU ; Ganjipour, Bahram ^LU ; Ek, Martin ^LU ; Dick Thelander, Kimberly ^LU ; Lind, Erik ^LU ; Nilsson, Peter ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2012) 70th Annual Device Research Conference (DRC) p.205-206
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High-Performance InAs Nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Dick Thelander, Kimberly ^LU ; Borg, Mattias ^LU ; Borgström, Magnus ^LU ; Nilsson, Peter ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(6). p.791-793
- Contribution to journal › Article
Mark 1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
Delker, Collin J. ; Kim, Seongmin ; Borg, Mattias ^LU ; Wernersson, Lars-Erik ^LU and Janes, David B. (2012) In IEEE Transactions on Electron Devices 59(7). p.1980-1987
- Contribution to journal › Article
Mark Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
Ganjipour, Bahram ^LU ; Borg, Mattias ^LU ; Ek, Martin ^LU ; Dick Thelander, Kimberly ^LU ; Pistol, Mats-Erik ^LU ; Wernersson, Lars-Erik ^LU and Thelander, Claes ^LU (2012) ICPS 2012
- Contribution to conference › Abstract
Mark Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
Borg, Mattias ^LU ; Ek, Martin ^LU ; Ganjipour, Bahram ^LU ; Dey, Anil ^LU ; Dick Thelander, Kimberly ^LU ; Wernersson, Lars-Erik ^LU and Thelander, Claes ^LU (2012) MRS Fall Meeting, 2012
- Contribution to conference › Abstract
Mark High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Nilsson, Peter ^LU and Wernersson, Lars-Erik ^LU (2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding

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