Lars-Erik Wernersson
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- 2012
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
(2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs Nanowires for High Frequency Electronics
(2012) GigaHertz Symposium 2012
- Contribution to conference › Abstract
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
(2012) MRS Fall Meeting, 2012
- Contribution to conference › Abstract
-
Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
(2012) In Nano Letters
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
- Contribution to journal › Published meeting abstract
- 2011
-
Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
- Contribution to journal › Article
-
Mark
60 GHz impulse radio measurements
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
