Lars-Erik Wernersson
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- 2011
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Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Contribution to journal › Article
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Mark
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
(2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
60 GHz impulse radio measurements
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Design of RF Properties for Vertical Nanowire MOSFETs
- Contribution to journal › Article
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Mark
Impulse-based 4 Gbit/s radio link at 60 GHz
- Contribution to journal › Article
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Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
- Contribution to journal › Article
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Mark
High quality InAs and GaSb thin layers grown on Si (111)
- Contribution to journal › Article
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
- Contribution to journal › Article
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Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
- Contribution to journal › Article
