Erik Lind

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2018
Mark A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
Netsu, Seiko ^LU ; Hellenbrand, Markus ^LU ; Zota, Cezar B. ^LU ; Miyamoto, Yasuyuki and Lind, Erik ^LU (2018) In IEEE Journal of the Electron Devices Society 6. p.408-412
- Contribution to journal › Article
Mark RF Characterisation of Vertical III-V Nanowire Tunnel FETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
Mark Fabrication of Tunnel Field-Effect Transistors
Krishnaraja, Abinaya ^LU ; Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
2017
Mark Gated Hall effect measurements on selectively grown InGaAs nanowires
Lindelöw, F. ^LU ; Zota, C. B. ^LU and Lind, E. ^LU (2017) In Nanotechnology 28(20).
- Contribution to journal › Article
Mark 1/f and RTS noise in InGaAs nanowire MOSFETs
Möhle, C. ; Zota, C. B. ^LU ; Hellenbrand, M. ^LU and Lind, E. ^LU (2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55
- Contribution to journal › Article
Mark Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU ; Persson, Axel ^LU ; Sant, Saurabh ; Schenk, Andreas ; Svensson, Johannes ^LU ; Wallenberg, Reine ^LU and Wernersson, Lars-Erik ^LU (2017) In Nano Letters
- Contribution to journal › Letter
Mark Impact of doping and diameter on the electrical properties of GaSb nanowires
Babadi, Aein S. ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Applied Physics Letters 110(5).
- Contribution to journal › Article
Mark Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V
Memisevic, E. ^LU ; Svensson, J. ^LU ; Hellenbrand, M. ^LU ; Lind, E. ^LU and Wernersson, L. E. ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-19
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark InGaAs tri-gate MOSFETs with record on-current
Zota, Cezar B. ^LU ; Lindelow, Fredrik ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-4
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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