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- 2014
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Mark
III-V semiconductor nanowires for future devices
2014) 17th Design, Automation and Test in Europe, DATE 2014(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2013
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Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
(
- Contribution to journal › Article
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Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
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Mark
Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.
(
- Contribution to journal › Article
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Mark
Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
(
- Contribution to journal › Article
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Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
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Mark
Exploring the diameter limitation in III-Sb heterostructure growth
2013) 7th Nanowire growth workshop, 2013(
- Contribution to conference › Abstract