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- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
- Contribution to journal › Article
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
(2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
(2012) MRS Fall Meeting, 2012
- Contribution to conference › Abstract
-
Mark
InAs Nanowires for High Frequency Electronics
(2012) GigaHertz Symposium 2012
- Contribution to conference › Abstract
- 2011
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
- Contribution to journal › Article
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Contribution to journal › Article
