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2011
Mark RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Johansson, Sofia ^LU ; Egard, Mikael ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Berg, Martin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) In IEEE Transactions on Microwave Theory and Techniques 59(10). p.2733-2738
- Contribution to journal › Article
Mark Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
Nilsson, Henrik ^LU ; Caroff, Philippe ^LU ; Lind, Erik ^LU ; Pistol, Mats-Erik ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2011) In Journal of Applied Physics 110(6).
- Contribution to journal › Article
Mark Temperature and annealing effects on InAs nanowire MOSFETs
Johansson, Sofia ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) 17th International Conference on Insultating Films on Semiconductors 88(7). p.1105-1108
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark GaSb nanowire single-hole transistor
Ganjipour, Bahram ^LU ; Nilsson, Henrik ^LU ; Borg, Mattias ^LU ; Wernersson, Lars-Erik ^LU ; Samuelson, Lars ^LU ; Xu, Hongqi ^LU and Thelander, Claes ^LU (2011) In Applied Physics Letters 99(26).
- Contribution to journal › Article
Mark Transient studies on InAs/HfO2 nanowire capacitors
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU and Wernersson, Lars-Erik ^LU (2011) In Applied Physics Letters 98(1).
- Contribution to journal › Article
Mark 60 GHz impulse radio measurements
Ärlelid, Mats ^LU ; Ohlsson, Lars ^LU ; Egard, Mikael ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) IEEE International Conference on Ultra-Wideband (ICUWB), 2011 p.536-540
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Design of RF Properties for Vertical Nanowire MOSFETs
Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) In IEEE Transactions on Nanotechnology 10(4). p.668-673
- Contribution to journal › Article
Mark Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
Timm, Rainer ^LU ; Hjort, Martin ^LU ; Fian, Alexander ; Borg, Mattias ^LU ; Thelander, Claes ^LU ; Andersen, Jesper N ^LU ; Wernersson, Lars-Erik ^LU and Mikkelsen, Anders ^LU (2011) In Applied Physics Letters 99(22). p.1-222907
- Contribution to journal › Article
Mark Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU ; Caroff, Philippe ^LU ; Borgström, Magnus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
Borg, Mattias ^LU ; Dick Thelander, Kimberly ^LU ; Eymery, Joel and Wernersson, Lars-Erik ^LU (2011) In Applied Physics Letters 98(11).
- Contribution to journal › Article

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