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- 2019
-
Mark
Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Core-shell tfet developments and tfet limitations
2019) 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2014
-
Mark
Measurements of light absorption efficiency in InSb nanowires
(
- Contribution to journal › Article
-
Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
-
Mark
Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
(
- Contribution to journal › Article
- 2013
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article