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- 2013
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Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
(
- Contribution to journal › Article
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration
(
- Contribution to journal › Article
-
Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
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Mark
1/f-noise in Vertical InAs Nanowire Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
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Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article
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Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
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Mark
Synthesis and properties of antimonide nanowires
(
- Contribution to journal › Scientific review