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- 2011
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Mark
Impact of Atomic Oxygen on the Structure of Graphene Formed on Ir(111) and Pt(111)
- Contribution to journal › Article
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Mark
Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Theoretical Characterization of the PC60BM:PDDTT Model for an Organic Solar Cell
- Contribution to journal › Article
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Mark
Persistent currents in dipolar Bose-Einstein condensates confined in annular potentials
- Contribution to journal › Article
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Mark
Thermal resistance of a nanoscale point contact to an indium arsenide nanowire
- Contribution to journal › Article
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Mark
Transient studies on InAs/HfO2 nanowire capacitors
- Contribution to journal › Article
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Mark
Doping profile of InP nanowires directly imaged by photoemission electron microscopy
- Contribution to journal › Article
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Mark
Plasmon single- and multi-quantum excitation in free metal clusters as seen by photoelectron spectroscopy.
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Acoustic phonons in nanowires with embedded heterostructures
- Contribution to journal › Article
