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- 2024
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Mark
Demonstrating reconfigurability in water-based electromagnetic devices using a 3D-printed siphon
- Contribution to journal › Article
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Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
- Contribution to journal › Article
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Mark
Characteristic Modes and Nonreciprocity
(2024) 2024 IEEE International Symposium on Antennas and Propagation and INC/USNCURSI Radio Science Meeting, AP-S/INC-USNC-URSI 2024 In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) p.269-270
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
- Contribution to journal › Article
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Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
(2024) In IEEE Transactions on Electron Devices
- Contribution to journal › Article
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Mark
TFET Circuit Configurations Operating below 60 mV/dec
- Contribution to journal › Article
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Mark
III-V MOSFETs for RF Applications
(2024) 2024 IEEE International Electron Devices Meeting, IEDM 2024
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
- Contribution to journal › Article
- 2023
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Mark
Accelerating AI using next-generation hardware : Possibilities and challenges with analog in-memory computing
(2023) 2023 IEEE/CVF Winter Conference on Applications of Computer Vision Workshops, WACVW 2023 p.488-496
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
- Contribution to journal › Article
