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- 2021
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
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- Contribution to journal › Article
- 2020
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Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
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- Contribution to journal › Article
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Mark
III-V Nanowire MOSFETs : RF-Properties and Applications
2020) 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
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- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
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- Contribution to journal › Article
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Mark
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
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- Contribution to journal › Article
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Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
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- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
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Mark
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
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- Contribution to journal › Article