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- 2025
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Mark
Real-Time Near-Field mmWave Measurements Using Screen-Printed Metasurfaces and IR Camera
- Contribution to journal › Article
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Mark
Scalable Vertical In-Ga-As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width
- Contribution to journal › Article
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Mark
Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs
(2025) In IEEE Electron Device Letters
- Contribution to journal › Article
-
Mark
Characteristic mode analysis of acoustic scatterers
- Contribution to journal › Article
-
Mark
Theory and Computation of Substructure Characteristic Modes
- Contribution to journal › Article
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Mark
Prospects of analog in-memory computing using ferroelectric tunnel junctions
- Contribution to journal › Article
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Mark
Designing objects that are invisible to electromagnetic waves
- Contribution to journal › Article
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Mark
Multi-level vertical III-V nanowire gate-all-around ferroelectric FETs for in-memory computing
(2025)
- Contribution to conference › Abstract
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Mark
Scattering computations using a rotationally symmetric solver implemented in open source finite elements
(2025) In Technical Report
- Book/Report › Report
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Mark
Impact of Layout on the RF Performance of Vertical In–Ga–As Nanowire MOSFETs
- Contribution to journal › Article
