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- 2024
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Mark
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
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- Contribution to journal › Article
- 2023
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Mark
Cryogenic Characteristics of InGaAs MOSFET
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- Contribution to journal › Article
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
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- Contribution to journal › Article
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Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
Impact of Temperature-Induced Oxide Defects on HfxZr1−xO2 Ferroelectric Tunnel Junction Memristor Performance
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
- 2022
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Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
- 2021
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Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
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- Contribution to journal › Article
- 2020
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Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
- 2017
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Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
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- Contribution to journal › Article