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- 2017
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Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
- Contribution to journal › Article
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Mark
Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
- Contribution to journal › Article
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Mark
Towards high efficiency nanowire solar cells
- Contribution to journal › Article
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
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Mark
Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
- Contribution to journal › Article
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Mark
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
- Contribution to journal › Article
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Mark
Dynamical Tuning of Nanowire Lasing Spectra
- Contribution to journal › Article
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Mark
Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction
- Contribution to journal › Article
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
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Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
- Contribution to journal › Article
