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- 2017
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
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Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
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Mark
Conduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions
(
- Contribution to journal › Article
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Mark
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
(
- Contribution to journal › Article
-
Mark
InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
(
- Contribution to journal › Article
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Mark
Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
(
- Contribution to journal › Article
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Mark
Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
(
- Contribution to journal › Article
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Mark
Towards high efficiency nanowire solar cells
(
- Contribution to journal › Article
- 2016
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Mark
Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire
(
- Contribution to journal › Article
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Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article