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- 2019
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
(
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
-
Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
- 2018
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
(
- Contribution to journal › Letter
-
Mark
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel Field-Effect Transistors
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding