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- 2024
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Gate-controlled near-surface Josephson junctions
(
- Contribution to journal › Article
- 2023
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Low temperature atomic hydrogen annealing of InGaAs MOSFETs
(
- Contribution to journal › Article
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8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
(
- Contribution to journal › Article
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Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
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Time evolution of surface species during the ALD of high-k oxide on InAs
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
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Cryogenic Characteristics of InGaAs MOSFET
(
- Contribution to journal › Article
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Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
(
- Contribution to journal › Article
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Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
(
- Contribution to journal › Article
- 2022
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Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
(
- Contribution to journal › Article
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Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
(
- Contribution to journal › Article
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Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
(
- Contribution to journal › Article
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Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
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Oxygen relocation during HfO2 ALD on InAs
(
- Contribution to journal › Article
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Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2021
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Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
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Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
(
- Contribution to journal › Article
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
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Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
- 2020
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Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
(
- Contribution to journal › Article
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Vertical nanowire III–V MOSFETs with improved high-frequency gain
(
- Contribution to journal › Article
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Mark
Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
-
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Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
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Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
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Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
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III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
(
- Contribution to journal › Article
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Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
(
- Contribution to journal › Article
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Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
- 2019
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Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
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Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
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Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
(
- Contribution to journal › Article
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Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
2019) 21th International Vacuum Congress(
- Contribution to conference › Abstract
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Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2018
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Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
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Mark
Fabrication of Tunnel Field-Effect Transistors
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
(
- Contribution to journal › Letter
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Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
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Mark
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2017
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
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Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
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Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
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Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
2017) 75th Annual Device Research Conference, DRC 2017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
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Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
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Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
(
- Contribution to journal › Article
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Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
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Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High frequency III-V nanowire MOSFETs
(
- Contribution to journal › Scientific review
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Mark
Size-effects in indium gallium arsenide nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
(
- Contribution to journal › Article
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Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
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High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
(
- Contribution to journal › Article
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Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article
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ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
(
- Contribution to journal › Article
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Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
Single suspended InGaAs nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
(
- Contribution to journal › Article
- 2015
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Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
(
- Contribution to journal › Article
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Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
(
- Contribution to journal › Article
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Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article
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Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
(
- Contribution to journal › Article
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Mark
High Frequency InGaAs Nanowire MOSFETs
2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
2015) Compound Semiconductor Week 2015(
- Contribution to conference › Paper, not in proceeding
-
Mark
III-V Heterostructure Nanowire Tunnel FETs
(
- Contribution to journal › Article
- 2014
-
Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
-
Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of Radial Nanowire Tunnel Field-Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Asymmetric InGaAs MOSFETs with InGaAs source and InP drain
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering
(
- Contribution to journal › Article
-
Mark
Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors
(
- Contribution to journal › Article
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Mark
Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
(
- Contribution to journal › Article
-
Mark
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
(
- Contribution to journal › Article
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article
-
Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
(
- Contribution to journal › Article
-
Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
(
- Contribution to journal › Article