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- 2016
-
Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
(
- Contribution to journal › Article
- 2015
-
Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
(
- Contribution to journal › Article
- 2014
-
Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article
-
Mark
Characterization of Border Traps in III-V MOSFETs Using an RF Transconductance Method
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2012
-
Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
-
Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
-
Mark
InAs Nanowires for High Frequency Electronics
2012) GigaHertz Symposium 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Inverter circuits based on vertical InAs nanowire MOSFETs
2011) Swedish System-on-Chip Conference, SSoCC 2011(
- Contribution to conference › Paper, not in proceeding
- 2010
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding