Mattias Borg

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2011
Mark High Transconductance Self-Aligned Gate-Last Surface Channel In_0.53Ga_0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) IEEE International Electron Devices Meeting (IEDM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark 15 nm diameter InAs nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) Device Research Conference (DRC), 2011 69th Annual p.21-22
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
Ek, Martin ^LU ; Borg, Mattias ^LU ; Dey, Anil ^LU ; Ganjipour, Bahram ^LU ; Thelander, Claes ^LU ; Wernersson, Lars-Erik ^LU and Dick Thelander, Kimberly ^LU (2011) In Crystal Growth & Design 11(10). p.4588-4593
- Contribution to journal › Article
Mark Inverter circuits based on vertical InAs nanowire MOSFETs
Dey, Anil ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Gorji, Sepideh ^LU ; Jansson, Kristofer ^LU ; Johansson, Sofia ^LU ; Lind, Erik ^LU ; Persson, Karl-Magnus ^LU ; Thelander, Claes ^LU and Ärlelid, Mats ^LU , et al. (2011) Swedish System-on-Chip Conference, SSoCC 2011
- Contribution to conference › Paper, not in proceeding
Mark Compositional grading of axial heterojunctions in metal particle seeded III - V semiconductor nanowires.
Johansson, Jonas ^LU ; Borg, Mattias ^LU ; Bolinsson, Jessica ^LU and Dick Thelander, Kimberly ^LU (2011) MRS Fall Meeting, 2011
- Contribution to conference › Paper, not in proceeding
Mark Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, B. ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2011) 69th Device Research Conference, DRC 2011
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2010
Mark Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging
Favre-Nicolin, V. ; Mastropietro, F. ; Eymery, J. ; Camacho, D. ; Niquet, Y. M. ; Borg, Mattias ^LU ; Messing, Maria ^LU ; Wernersson, Lars-Erik ^LU ; Algra, R. E. and Bakkers, E. P. A. M. , et al. (2010) In New Journal of Physics 12.
- Contribution to journal › Article
Mark InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
Borg, Mattias ^LU ; Dick Thelander, Kimberly ^LU ; Ganjipour, Bahram ^LU ; Pistol, Mats-Erik ^LU ; Wernersson, Lars-Erik ^LU and Thelander, Claes ^LU (2010) In Nano Letters 10(Online August 24, 2010). p.4080-4085
- Contribution to journal › Article
Mark Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
Egard, Mikael ^LU ; Johansson, Sofia ^LU ; Johansson, Anne-Charlotte ; Persson, Karl-Magnus ^LU ; Dey, Anil ^LU ; Borg, Mattias ^LU ; Thelander, Claes ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2010) In Nano Letters 10(3). p.809-812
- Contribution to journal › Article
Mark High Frequency Performance of Vertical InAs Nanowire MOSFET
Lind, Erik ^LU ; Egard, Mikael ^LU ; Johansson, Sofia ^LU ; Johansson, Anne-Charlotte ; Borg, Mattias ^LU ; Thelander, Claes ^LU ; Persson, Karl-Magnus ^LU ; Dey, Anil ^LU and Wernersson, Lars-Erik ^LU (2010) 22nd International Conference on Indium Phosphide and Related Materials
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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