Claes Thelander
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- 2014
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Mark
Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studies.
- Contribution to journal › Article
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Mark
Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments
- Contribution to journal › Article
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Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
- Contribution to journal › Article
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Mark
Growth of InAs/GaSb core shell nanowires with various fully controlled crystal structures along the core
(2014) 17th International Conference on Metalorganic Vapor Phase Epitaxy, 2014
- Contribution to conference › Abstract
-
Mark
Observation of Type II Recombination in Single Wurtzite-Zincblende GaAs Heterojunction Nanowire
(2014) MRS Spring Meeting, 2014
- Contribution to conference › Abstract
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Mark
Bridging Electronic Barriers in InAs-Nanowires with Oligo(phenylene vinylene) Molecular Wires
(2014) MRS Spring Meeting, 2014
- Contribution to conference › Abstract
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Mark
Electron-Hole Transport in Core-Shell InAs-GaSb Nanowires
(2014) 32nd International Conference on the Physics of Semiconductors
- Contribution to conference › Abstract
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Mark
InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications
(2014) The 72th Device Research Conference In IEEE Device Research Conference. Proceedings p.123-124
- Contribution to journal › Published meeting abstract
- 2013
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
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Mark
Control and understanding of kink formation in InAs-InP heterostructure nanowires.
- Contribution to journal › Article
