Lars-Erik Wernersson
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- 2015
-
Mark
Narrow gap nanowires: From nanotechnology to RF-circuits on Si
- Contribution to journal › Article
-
Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
Roll, Guntrade LU ; Mo, Jiongjiong LU ; Lind, Erik LU
; Johansson, Sofia
LU
and Wernersson, Lars-Erik
LU
(2015)
In Applied Physics Letters
106(20).
- Contribution to journal › Article
-
Mark
III-V nanowires for logics and beyond
- Contribution to journal › Article
-
Mark
Impulse Based Radio Technology for Mm-Waves
Sjöberg, Daniel LU
; Ohlsson, Lars
LU
; Vakili, Iman
LU
; Gustafsson, Mats
LU
and Wernersson, Lars-Erik
LU
(2015)
9th European Conference on antennas and Propagation (EuCAP), 2015
In [Publication information missing]
p.1-2
- Contribution to journal › Published meeting abstract
-
Mark
Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
Memisevic, Elvedin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2015)
Compound Semiconductor Week 2015
- Contribution to conference › Paper, not in proceeding
-
Mark
III-V Heterostructure Nanowire Tunnel FETs
Lind, Erik LU
; Memisevic, Elvedin
LU
; Dey, Anil
LU
and Wernersson, Lars-Erik
LU
(2015)
In IEEE Journal of the Electron Devices Society
3(3).
p.96-102
- Contribution to journal › Article
- 2014
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
(2014)
In IEEE Electron Device Letters
35(3).
p.342-344
- Contribution to journal › Article
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
Jansson, Kristofer LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2014)
In IEEE Transactions on Electron Devices
61(2).
p.452-459
- Contribution to journal › Article
-
Mark
RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz
Johansson, Sofia LU ; Memisevic, Elvedin LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
(2014)
26th International Conference on Indium Phosphide and Related Materials (IPRM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
(2014)
72nd Annual Device Research Conference (DRC)
p.209-210
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding