Erik Lind
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- 2017
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
2017) 75th Annual Device Research Conference, DRC 2017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article