Vanya Darakchieva

21 – 30 of 57

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/person/va4841da?embed=1&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

2024
Mark PREFACE TO VOLUME 2
Darakchieva, Vanya ^LU (2024) 2. p.2-2
- Chapter in Book/Report/Conference proceeding › Foreword/Postscript
Mark Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
Hult, Björn ; Bergsten, Johan ; Ferrand-Drake Del Castillo, Ragnar ; Darakchieva, Vanya ^LU ; Malmros, Anna ; Hjelmgren, Hans ; Thorsell, Mattias and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(12). p.7383-7389
- Contribution to journal › Article
Mark COMPREHENSIVE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, SECOND EDITION : Volumes 1-3
Fornari, Roberto ; Grundmann, Marius ; Darakchieva, Vanya ^LU and Fay, Patrick (2024) 1-3.
- Book/Report › Book
Mark Characterization of semiconductors by spectroscopic ellipsometry
Schubert, Mathias ^LU ; Mock, Alyssa ; Stokey, Megan ; Rindert, Viktor ^LU ; Armakavicius, Nerijus and Darakchieva, Vanya ^LU (2024) 2. p.2-539
- Chapter in Book/Report/Conference proceeding › Book chapter
2023
Mark Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
Chen, Ding Yuan ; Persson, Axel R. ; Darakchieva, Vanya ^LU ; Persson, Per O.Å. ; Chen, Jr Tai and Rorsman, Niklas (2023) In Semiconductor Science and Technology 38(10).
- Contribution to journal › Article
Mark On the thermal conductivity anisotropy in wurtzite GaN
Tran, Dat Q. ; Paskova, Tania ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In AIP Advances 13(9).
- Contribution to journal › Article
Mark THz Spectroscopic Electron Paramagnetic Resonance of the Fe³⁺Defect in GaN
Rindert, Viktor ^LU ; Richter, Steffen ^LU ; Knight, Sean ^LU ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, Axel R. ; Gustafsson, Anders ^LU ; Bi, Zhaoxia ^LU ; Samuelson, Lars ^LU ; Darakchieva, Vanya ^LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
- Contribution to journal › Article
Mark Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
- Contribution to journal › Article
Mark Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya ^LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
- Contribution to journal › Article