Vanya Darakchieva
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- 2024
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Mark
Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
(
- Contribution to journal › Article
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Mark
Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction
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- Contribution to journal › Article
- 2023
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article
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Mark
On the thermal conductivity anisotropy in wurtzite GaN
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- Contribution to journal › Article
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
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- Contribution to journal › Article
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Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
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- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
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- Contribution to journal › Article
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Mark
THz Spectroscopic Electron Paramagnetic Resonance of the Fe3+Defect in GaN
2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
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- Contribution to journal › Article
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
(
- Contribution to journal › Article