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- 2016
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
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Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article
- 2015
-
Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
(
- Contribution to journal › Article
-
Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
(
- Contribution to journal › Article
-
Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article
-
Mark
Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
2015) Compound Semiconductor Week 2015(
- Contribution to conference › Paper, not in proceeding
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Mark
III-V Heterostructure Nanowire Tunnel FETs
(
- Contribution to journal › Article
-
Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
(
- Contribution to journal › Article
- 2014
-
Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
(
- Contribution to journal › Article
-
Mark
In GaAs MOSFETs with InP Drain
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article