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2023
Mark Low Al-content n-type Al_xGa_1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, Vallery ; Armakavicius, Nerijus ; Gogova, Daniela ; Nawaz, Muhammad ; Rorsman, Niklas ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Vacuum 217.
- Contribution to journal › Article
Mark Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya ^LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
- Contribution to journal › Article
Mark Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al_xGa_1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ^LU and Persson, Per O.Å. , et al. (2023) In Journal of Applied Physics 134(18).
- Contribution to journal › Article
Mark Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
Gribisch, Philipp ^LU ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ^LU and Lind, Erik ^LU (2023) In IEEE Transactions on Electron Devices 70(8). p.4101-4107
- Contribution to journal › Article
Mark THz Spectroscopic Electron Paramagnetic Resonance of the Fe³⁺Defect in GaN
Rindert, Viktor ^LU ; Richter, Steffen ^LU ; Knight, Sean ^LU ; Schubert, Mathias ^LU and Darakchieva, Vanya ^LU (2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
Chen, Ding Yuan ; Persson, Axel R. ; Darakchieva, Vanya ^LU ; Persson, Per O.Å. ; Chen, Jr Tai and Rorsman, Niklas (2023) In Semiconductor Science and Technology 38(10).
- Contribution to journal › Article
Mark On the thermal conductivity anisotropy in wurtzite GaN
Tran, Dat Q. ; Paskova, Tania ; Darakchieva, Vanya ^LU and Paskov, Plamen P. (2023) In AIP Advances 13(9).
- Contribution to journal › Article
2022
Mark Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
Kakanakova-Georgieva, Anelia ; Papamichail, Alexis ; Stanishev, Vallery and Darakchieva, Vanya ^LU (2022) In Physica Status Solidi (B) Basic Research 259(10).
- Contribution to journal › Article
Mark Mg-doping and free-hole properties of hot-wall MOCVD GaN
Papamichail, A. ; Kakanakova-Georgieva, A. ; Sveinbjörnsson, E. ; Persson, A. R. ; Hult, B. ; Rorsman, N. ; Stanishev, V. ; Le, S. P. ; Persson, P. O.Å. and Nawaz, M. , et al. (2022) In Journal of Applied Physics 131(18).
- Contribution to journal › Article
Mark Doped semiconducting polymer nanoantennas for tunable organic plasmonics
Karki, Akchheta ; Yamashita, Yu ; Chen, Shangzhi ; Kurosawa, Tadanori ; Takeya, Jun ; Stanishev, Vallery ; Darakchieva, Vanya ^LU ; Watanabe, Shun and Jonsson, Magnus P. (2022) In Communications Materials 3(1).
- Contribution to journal › Article

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