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- 2016
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
- Contribution to journal › Article
-
Mark
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
- Contribution to journal › Article
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
- Contribution to journal › Letter
-
Mark
Single suspended InGaAs nanowire MOSFETs
- Contribution to journal › Article
- 2015
-
Mark
Time-Domain System for Millimeter-Wave Material Characterization
- Contribution to journal › Article
-
Mark
Picosecond dynamics in a millimetre-wave RTD-MOSFET wavelet generator
- Contribution to journal › Article
-
Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
- Contribution to journal › Article
-
Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
- Contribution to journal › Article
-
Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
- Contribution to journal › Article
