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- 2023
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Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
- 2022
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Mark
Advantage of Binary Stochastic synapses for hardware Spiking Neural Networks with realistic memristors
(
- Contribution to journal › Article
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Mark
Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2020
-
Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
(
- Contribution to journal › Article
- 2017
-
Mark
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
(
- Contribution to journal › Article
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
- 2016
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
(
- Contribution to journal › Article
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Mark
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
2016) 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding