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2018
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
Mark Fabrication of Tunnel Field-Effect Transistors
Krishnaraja, Abinaya ^LU ; Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In Nanotechnology 29(43).
- Contribution to journal › Article
Mark Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) 76th Device Research Conference p.137-138
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2017
Mark Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V
Memisevic, E. ^LU ; Svensson, J. ^LU ; Hellenbrand, M. ^LU ; Lind, E. ^LU and Wernersson, L. E. ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-19
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark InGaAs tri-gate MOSFETs with record on-current
Zota, Cezar B. ^LU ; Lindelow, Fredrik ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-4
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark 1/f and RTS noise in InGaAs nanowire MOSFETs
Möhle, C. ; Zota, C. B. ^LU ; Hellenbrand, M. ^LU and Lind, E. ^LU (2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55
- Contribution to journal › Article
Mark Record performance for junctionless transistors in InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.34-35
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I_on = 330 μa/μm at I_off = 100 nA/μm and V_D = 0.5 v
Kilpi, Olli Pekka ^LU ; Wu, Jun ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU ; Wu, Jun ^LU ; Persson, Axel R. ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Nano Letters 17(10). p.6006-6010
- Contribution to journal › Article

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