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- 2018
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
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Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
(
- Contribution to journal › Article
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Mark
Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan(
- Contribution to conference › Abstract
- 2017
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
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Mark
Increased absorption in InAsSb nanowire clusters through coupled optical modes
(
- Contribution to journal › Article
- 2016
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Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
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Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article