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- 2014
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Mark
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
(
- Contribution to journal › Article
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Mark
Measurements of light absorption efficiency in InSb nanowires
(
- Contribution to journal › Article
- 2013
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Mark
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
(
- Contribution to journal › Article
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Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
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Mark
Synthesis and properties of antimonide nanowires
(
- Contribution to journal › Scientific review
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Mark
Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
(
- Contribution to journal › Article
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Mark
MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
(
- Contribution to journal › Article
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Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
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Mark
GaSb nanowire pFETs for III-V CMOS
2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14(
- Contribution to journal › Published meeting abstract
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Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article