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- 2023
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Mark
THz Spectroscopic Electron Paramagnetic Resonance of the Fe3+Defect in GaN
2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
(
- Contribution to journal › Article
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
(
- Contribution to journal › Article
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
(
- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
(
- Contribution to journal › Article
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
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Mark
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
(
- Contribution to journal › Article
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Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
(
- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
(
- Contribution to journal › Article
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
(
- Contribution to journal › Article