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2017
Mark III-V MOSFETs for High-Frequency and Digital Applications
Zota, Cezar ^LU (2017)
- Thesis › Doctoral thesis (compilation)
Mark Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V
Memisevic, E. ^LU ; Svensson, J. ^LU ; Hellenbrand, M. ^LU ; Lind, E. ^LU and Wernersson, L. E. ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-19
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark InGaAs tri-gate MOSFETs with record on-current
Zota, Cezar B. ^LU ; Lindelow, Fredrik ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-4
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark A transmission line model for co-designed slot-coupled dielectric resonator antennas
Ohlsson, Lars ^LU ; Sjöberg, Daniel ^LU and Wernersson, Lars Erik ^LU (2017) 46th European Microwave Conference, EuMC 2016 p.333-336
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) Compound Semiconductor Week 2017
- Contribution to conference › Paper, not in proceeding
Mark Properties of III-V nanowires : MOSFETs and TunnelFETs
Wernersson, Lars-Erik ^LU (2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Record performance for junctionless transistors in InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.34-35
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I_on = 330 μa/μm at I_off = 100 nA/μm and V_D = 0.5 v
Kilpi, Olli Pekka ^LU ; Wu, Jun ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Junctionless tri-gate InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) In Japanese Journal of Applied Physics 56(12).
- Contribution to journal › Article
Mark The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
Schenk, A. ; Sant, S. ; Moselund, K. ; Riel, H. ; Memisevic, E. ^LU and Wernersson, L. E. ^LU (2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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