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- 2017
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
(2017)
- Thesis › Doctoral thesis (compilation)
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Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InGaAs tri-gate MOSFETs with record on-current
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A transmission line model for co-designed slot-coupled dielectric resonator antennas
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
(2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
- Contribution to journal › Letter
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
(2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
