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- 2010
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Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
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- Contribution to journal › Article
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Mark
Nonlinear electrical properties of Si three-terminal junction devices
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- Contribution to journal › Article
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Mark
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
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- Contribution to journal › Article
- 2009
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Mark
Optical determination of Young's modulus of InAs nanowires
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- Contribution to journal › Article
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Mark
Investigation of electron wave function hybridization in Ga0.25In0.75As/InP arrays
(
- Contribution to journal › Article
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Mark
X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires
(
- Contribution to journal › Article
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Mark
Diagnostic of laser contrast using target reflectivity
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- Contribution to journal › Article
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Mark
g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
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- Contribution to journal › Article
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Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
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- Contribution to journal › Article
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Mark
Controlling the spectrum of x-rays generated in a laser-plasma accelerator by tailoring the laser wavefront
(
- Contribution to journal › Article