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- 2018
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
- 2017
-
Mark
III-V MOSFETs for High-Frequency and Digital Applications
2017)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires
(
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
2017) In IEEE Electron Device Letters(
- Contribution to journal › Letter
- 2016
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
- 2015
-
Mark
Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
(
- Contribution to journal › Article
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Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
(
- Contribution to journal › Article
-
Mark
Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth
(
- Contribution to journal › Article
-
Mark
High Frequency InGaAs Nanowire MOSFETs
2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding