1 – 10 of 13
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2021
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
- 2019
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
(
- Contribution to journal › Article
-
Mark
Balanced Drive Currents in 10–20 nm Diameter Nanowire All-III-V CMOS on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2018
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
(
- Contribution to journal › Article
- 2012
-
Mark
Performance Evaluation of III–V Nanowire Transistors
(
- Contribution to journal › Article
- 2004
-
Mark
Novel nanoelectronic triodes and logic devices with TBJs
(
- Contribution to journal › Article
- 2003
-
Mark
Quantum and Ballistic Nanodevices
2003)(
- Thesis › Doctoral thesis (compilation)