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- 2012
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Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
(
- Contribution to journal › Article
- 2011
-
Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Design of RF Properties for Vertical Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article
-
Mark
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
(
- Contribution to journal › Article
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Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Atomistic study of the buckling of gold nanowires
(
- Contribution to journal › Article
-
Mark
Nanowire based electrodes for in vivo neuronal signal recordings
2011) RusNanoTech Nanotechnology International Forum(
- Contribution to conference › Abstract