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- 2024
-
Mark
Anomalous negative magnetoresistance in quantum dot Josephson junctions with Kondo correlations
(
- Contribution to journal › Article
- 2017
-
Mark
Growth and optical properties of InxGa1−xP nanowires synthesized by selective-area epitaxy
(
- Contribution to journal › Article
- 2015
-
Mark
Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy
(
- Contribution to journal › Article
- 2014
-
Mark
Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.
(
- Contribution to journal › Article
-
Mark
Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.
(
- Contribution to journal › Article
-
Mark
Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth.
(
- Contribution to journal › Article
- 2013
-
Mark
Zero-bias conductance peaks in Superconductor-Semiconductor Hybrid Quantum Devices: with and without Majorana fermions
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
-
Mark
Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover
(
- Contribution to journal › Article
- 2012
-
Mark
Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction
(
- Contribution to journal › Article
-
Mark
Observation of the superconductivity in a Nb-InSb nanowire-Nb hybrid quantum device
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Supercurrent and multiple Andreev reflections in InSb nanowire quantum dot devices with Al contacts
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
(
- Contribution to journal › Article
-
Mark
Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.
(
- Contribution to journal › Article
-
Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
-
Mark
Phonon transport and thermoelectricity in defect-engineered InAs nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
(
- Contribution to journal › Article
-
Mark
Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering
(
- Contribution to journal › Article
- 2011
-
Mark
Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism
(
- Contribution to journal › Article
-
Mark
Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.
(
- Contribution to journal › Article
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article
-
Mark
Parameter space mapping of InAs nanowire crystal structure
(
- Contribution to journal › Article
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
-
Mark
Phonon Transport and Thermoelectricity in Twinned InAs Nanowires
2011) MRS Fall Meeting, 2011(
- Contribution to conference › Paper, not in proceeding
-
Mark
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
(
- Contribution to journal › Article
-
Mark
Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases
(
- Contribution to journal › Article
- 2010
-
Mark
Crystalline properties and applications of II-V nanowires
2010) 18th intl symp Nanostructures: physics and technology(
- Contribution to conference › Paper, not in proceeding
-
Mark
Crystal Phase Engineering in Single InAs Nanowires.
(
- Contribution to journal › Article
-
Mark
Direct integration of GaAs/GaAsSb nanowires grown by MBE on SI without extrinsic metal particle
2010) MRS Spring Meeting, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article
-
Mark
Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
(
- Contribution to journal › Article
-
Mark
Diameter Dependence of the Wurtzite-Zinc Blende Transition in InAs Nanowires
(
- Contribution to journal › Article
-
Mark
Crystal structure tuning in InAs nanowires: pure WZ, pure ZB and structural superlattices
2010) MRS Spring Meeting, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Wurtzite-Zinc blende transition in InAs nanowires
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Control of III-V nanowire crystal structure by growth parameter tuning
(
- Contribution to journal › Article
-
Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
(
- Contribution to journal › Article
- 2009
-
Mark
Controlled polytypic and twin-plane superlattices in iii-v nanowires.
(
- Contribution to journal › Article
-
Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
(
- Contribution to journal › Article
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Nanowire Biocompatibility in the Brain - Looking for a Needle in a 3D Stack.
(
- Contribution to journal › Article
-
Mark
Growth of vertical InAs nanowires on heterostructured substrates
(
- Contribution to journal › Article
- 2008
-
Mark
Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article