Johannes Svensson

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2018
Mark Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) 76th Device Research Conference p.137-138
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark CMOS Integration Based on All-III-V Materials
Jönsson, Adam ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Abstract
Mark Vertical, High-Performance 12 nm diameter InAs Nanowire MOSFETs on Si using an all III-V CMOS process
Jönsson, Adam ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2018) Compound Semiconductor Week 2018
- Contribution to conference › Abstract
Mark Block Copolymer Nanopatterning of Dielectric Mask for Selective Area InAs Vertical Nanowire Growth
Löfstrand, Anette ^LU ; Graczyk, Mariusz ^LU ; Suyatin, Dmitry ^LU ; Kvennefors, Anders ^LU ; Maximov, Ivan ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2018) 4-th International Symposium on DSA, November 11-13, 2018, Sapporo, Japan
- Contribution to conference › Abstract
2017
Mark Increased absorption in InAsSb nanowire clusters through coupled optical modes
Svensson, Johannes ^LU ; Chen, Yang ^LU ; Anttu, Nicklas ^LU ; Pistol, Mats Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Applied Physics Letters 110(8).
- Contribution to journal › Article
Mark Impact of doping and diameter on the electrical properties of GaSb nanowires
Babadi, Aein S. ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Applied Physics Letters 110(5).
- Contribution to journal › Article
Mark Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V
Memisevic, E. ^LU ; Svensson, J. ^LU ; Hellenbrand, M. ^LU ; Lind, E. ^LU and Wernersson, L. E. ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-19
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters p.1661-1664
- Contribution to journal › Letter
Mark Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU ; Wu, Jun ^LU ; Persson, Axel R. ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Nano Letters 17(10). p.6006-6010
- Contribution to journal › Article

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