Erik Lind

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2011
Mark 60 GHz impulse radio measurements
Ärlelid, Mats ^LU ; Ohlsson, Lars ^LU ; Egard, Mikael ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) IEEE International Conference on Ultra-Wideband (ICUWB), 2011 p.536-540
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Design of RF Properties for Vertical Nanowire MOSFETs
Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) In IEEE Transactions on Nanotechnology 10(4). p.668-673
- Contribution to journal › Article
Mark Impulse-based 4 Gbit/s radio link at 60 GHz
Ärlelid, Mats ^LU ; Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) In Electronics Letters 47(7). p.70-467
- Contribution to journal › Article
Mark Temperature and annealing effects on InAs nanowire MOSFETs
Johansson, Sofia ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) 17th International Conference on Insultating Films on Semiconductors 88(7). p.1105-1108
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
Nilsson, Henrik ^LU ; Caroff, Philippe ^LU ; Lind, Erik ^LU ; Pistol, Mats-Erik ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2011) In Journal of Applied Physics 110(6).
- Contribution to journal › Article
Mark Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU ; Caroff, Philippe ^LU ; Borgström, Magnus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark 15 nm diameter InAs nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) Device Research Conference (DRC), 2011 69th Annual p.21-22
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High Transconductance Self-Aligned Gate-Last Surface Channel In_0.53Ga_0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) IEEE International Electron Devices Meeting (IEDM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Inverter circuits based on vertical InAs nanowire MOSFETs
Dey, Anil ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Gorji, Sepideh ^LU ; Jansson, Kristofer ^LU ; Johansson, Sofia ^LU ; Lind, Erik ^LU ; Persson, Karl-Magnus ^LU ; Thelander, Claes ^LU and Ärlelid, Mats ^LU , et al. (2011) Swedish System-on-Chip Conference, SSoCC 2011
- Contribution to conference › Paper, not in proceeding
Mark Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
Timm, Rainer ^LU ; Hjort, Martin ^LU ; Fian, Alexander ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Andersen, Jesper N ^LU ; Wernersson, Lars-Erik ^LU and Mikkelsen, Anders ^LU (2011) 17th Conference on "Insulating Films on Semiconductors" 88. p.1091-1094
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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