Erik Lind
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- 2020
-
Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
- Contribution to journal › Article
-
Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
- Contribution to journal › Article
-
Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
- Contribution to journal › Article
- 2019
-
Mark
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
(2019) In Microelectronic Engineering
- Contribution to journal › Article
-
Mark
Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
(2019) Insulating Films on Semiconductors (INFOS)
- Contribution to conference › Paper, not in proceeding
-
Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
- Contribution to journal › Article
-
Mark
Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
(2019) 21th International Vacuum Congress
- Contribution to conference › Abstract
- 2018
-
Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
(2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
- Contribution to journal › Article
