Claes Thelander
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- 2016
-
Mark
Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering
- Contribution to journal › Article
-
Mark
Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates
- Contribution to journal › Article
-
Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2015
-
Mark
Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
- Contribution to journal › Article
-
Mark
Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions
- Contribution to journal › Article
-
Mark
Selective GaSb radial growth on crystal phase engineered InAs nanowires.
- Contribution to journal › Article
-
Mark
Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.
- Contribution to journal › Article
-
Mark
Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.
- Contribution to journal › Article
- 2014
-
Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
- Contribution to journal › Article
